6-108 low noise, cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? low noise figure: 2.6 db typical at 1.5 ghz ? high gain: 25 db typical at 1.5 ghz ? 3 db bandwidth: dc to 2.5 ghz ? unconditionally stable (k>1) ? low power dissipation: 10 ma bias ? low cost plastic package INA-03184 84 plastic package description the INA-03184 is a low-noise silicon bipolar monolithic micro- wave integrated circuit (mmic) typical biasing configuration c block c bypass 1 (optional) c block r bias v cc v d = 4.0 v (nominal) rfc (optional) rf in rf out 4 1 2 3 note: 1. vswr can be improved by bypassing a 100C120 w bias resistor directly to ground. see an-s012: low noise amplifiers. feedback amplifier housed in a low cost surface mount plastic package. it is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noise if or rf amplification with minimum power consumption. the ina series of mmics is fabricated using hps 10 ghz f t , 25 ghz f max , isosat?-i silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielec- tric and scratch protection to achieve excellent performance, uniformity and reliability. 5965-9678e
6-109 INA-03184 absolute maximum ratings parameter absolute maximum [1] device current 25 ma power dissipation [2] 200 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance: q jc = 100 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. derate at 10 mw/ c for t c > 130 c. INA-03184 part number ordering information part number no. of devices container INA-03184-tr1 1000 7" reel INA-03184-blk 100 antistatic bag for more information, see tape and reel packaging for semiconductor devices. g p power gain (|s 21 | 2 ) f = 1.5 ghz db 23.0 25.0 d g p gain flatness f = 0.1 to 2.0 ghz db 0.8 f 3 db 3 db bandwidth [2] ghz 2.5 iso reverse isolation (|s 12 | 2 ) f = 1.5 ghz db 35 input vswr f = 0.01 to 2.0 ghz 2.0:1 output vswr f = 0.01 to 2.0 ghz 3.0:1 [3] nf 50 w noise figure f = 1.5 ghz db 2.6 p 1 db output power at 1 db gain compression f = 1.5 ghz dbm C2.0 ip 3 third order intercept point f = 1.5 ghz dbm 7 t d group delay f = 1.5 ghz psec 210 v d device voltage v 3.0 4.0 5.0 dv/dt device voltage temperature coefficient mv/ c+ 4 notes: 1. the recommended operating current range for this device is 8 to 18 ma. typical performance as a function of current is on the following page. 2. referenced from 10 mhz gain (g p ). 3. vswr can be improved by bypassing a 100C200 w bias resistor directly to ground. see an-s012: magic low noise amplifiers. INA-03184 electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 10 ma, z o = 50 w units min. typ. max. vswr
6-110 INA-03184 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 10 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.05 .32 179 25.6 19.14 C3 C37.1 .014 3 .55 0 1.48 0.10 .32 176 25.6 19.05 C7 C37.1 .014 4 .57 C3 1.45 0.20 .32 172 25.6 19.05 C14 C37.1 .014 6 .55 C5 1.48 0.40 .32 165 2.5 18.78 C29 C37.1 .014 10 .53 C11 1.53 0.60 .32 158 25.4 18.71 C43 C36.5 .015 11 .51 C14 1.49 0.80 .32 151 25.4 18.53 C57 C36.5 .015 13 .51 C17 1.50 1.00 .32 144 25.2 18.18 C72 C35.9 .016 21 .50 C20 1.46 1.20 .30 135 25.2 18.27 C86 C35.9 .016 25 .50 C23 1.46 1.40 .31 126 25.2 18.10 C102 C35.4 .017 30 .49 C29 1.42 1.60 .30 117 25.1 17.92 C117 C34.9 .018 38 .48 C34 1.38 1.80 .26 102 24.9 17.49 C135 C34.4 .019 44 .45 C41 1.39 2.00 .22 92 24.4 16.62 C153 C34.0 .020 49 .40 C50 1.44 2.50 .09 91 22.2 12.88 168 C33.6 .021 57 .26 C48 1.87 3.00 .14 160 18.9 8.79 134 C32.8 .023 65 .22 C33 2.40 3.50 .24 151 15.4 5.92 108 C32.0 .025 69 .26 C33 3.01 4.00 .29 139 12.4 4.18 87 C30.8 .029 81 .28 C43 3.52 note: 1. s-parameters are de-embedded from 70 mil package measured data using the package model found in the device models section. s 11 s 21 s 12 s 22 INA-03184 typical performance, t a = 25 c (unless otherwise noted) 0 5 10 15 20 25 i d (ma) g p (db) i d (ma) 046 210 8 v d (v) figure 2. device current vs. voltage. frequency (ghz) frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. figure 6. noise figure vs. frequency. nf (db) 10 15 20 25 30 1.0 0.1 0.2 0.5 1.0 2.0 5.0 2.0 3.0 4.0 5.0 g p (db) nf (db) frequency (ghz) figure 1. typical gain and noise figure vs. frequency, t a = 25 c, i d = 10 ma. t c = +85 c t c = +25 c t c = ?5 c 10 15 20 25 30 51015 25 20 figure 3. power gain vs. current. 3.0 2.0 24 25 26 27 ? ? ? 0 ?5 +25 +85 0.1 0.2 0.5 2.0 1.0 5.0 0.1 0.2 0.5 2.0 1.0 5.0 nf (db) ? 4 0 8 ? 1.0 4.0 3.0 5.0 2.0 p 1 db (dbm) p 1 db (dbm) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. casetemperature, f = 1.5 ghz, i d = 10 ma. g p p 1 db nf gain flat to dc f = 0.1 2 ghz f = 3 ghz i d = 10 to 16 ma i d = 8 ma i d = 8 ma i d = 10 ma i d = 16 ma
6-111 84 plastic package dimensions 1 4 3 2 0.51 (0.020) 0.51 (0.020) dimensions are in millimeters (inches) 0.20 ?0.050 (0.008 ?0.002) 2.15 (0.085) 1.52 ?0.25 (0.060 ?0.010) 5.46 ?0.25 (0.215 ?0.010) 5 ground rf output and dc bias ground rf input 031
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